Brief:There is no metal grid on the front, 100% sunlight is received. Low temperature coefficient, higher temperature resistance, high efficiency and high appearance. Size: 182.2mm*184mm 20BB 182.2mm*187.75mm 20BB 182.2mm*192.5mm 20BB
Brief:Size: 182.2mm*183.75mm±0.5mm(Diagonal 256±0.5mm) Thickness: 130±13μm Front Side (+): Silicon oxide + blue silicon nitride compound anti-reflection coating (PID Free) ,half-cut design.The busbar head is a large double fork, and the pads of the busbar are intermittently stepped. The distance between the busbars is 10.8±0.15mm.The size of the head pad is 0.8±0.15mm×1.2±0.15mm, and the size of the middle pad is 0.8±0.15mm×0.6±0.15mm. Back Side (-): The busbar width is 0.036±0.02mm, with 12 pads: the size of the head pad is 0.8±0.15mm×1.2±0.15mm; the size of the middle pad is 0.6±0.15mm×0.8±0.15mm.
Brief:Size: 182.3mm*210mm±0.5mm(Diameter 272±0.5mm) Thickness: 130±20μm Front Side (+): Silicon oxide + blue silicon nitride compound anti-reflection coating (PID Free) ,half-cut design.The busbar head is a large double fork, and the pads of the busbar are intermittently stepped. The distance between the busbars is 10.8±0.15mm.The size of the head pad is 0.8±0.15mm×1.2±0.15mm, and the size of the middle pad is 0.8±0.15mm×0.6±0.15mm.
Back Side (-): The busbar width is 0.036±0.02mm, with 14 pads: the size of the head pad is 0.8±0.15mm×1.2±0.15mm; the size of the middle pad is 0.6±0.15mm×0.8±0.15mm.
Brief:Size: 210mm*210mm±0.5mm(Diameter 295±0.5mm) Thickness:160±20μm Front Side (−): Silicon dioxide + blue nitride composite anti-reflection film (PID free), half-cut design; 12 roots busbar. The distance between the busbars is 17.45±0.15mm. The busbar width is 0.07±0.02mm , and the busbar has two forks head; the size of 12 pads is 1.0±0.2mm × 0.5±0.2mm.
Back Side (+): AlOX and SiNX dual layer and rear contact; the rear electrode is composed of 12 roots rear compound bus bar and 150-250 roots rear Al fingers, 12 sections, 1.4±0.3mm silver anode.
Brief:Size: 182.2mm*182.2mm±0.5mm (Diagonal 247.28±0.5mm) Thickness: 140±20μm Front Side (+): Silicon oxide + blue silicon nitride compound anti-reflection coating (PID Free); The front side is a half-cut design; The busbar head is a large double fork, and the pads of the busbar are intermittently stepped. The distance between the busbar is 17.3± 0.15mm. The size of the head pad is 1.2 ± 0.2mm * 1.3± 0.2mm, and the middle pad of the busbar size is 0.75±0.2mm*0.9±0.2mm. Back Side (-): The busbar width is 0.03±0.02mm (Ag). 14 pads, the size of the head pad is 1.2 ± 0.2mm * 1.3± 0.2mm, and the middle pad of the busbar size is 0.75±0.2mm*0.9±0.2mm.
Brief:Size: 182.2mm*182.2mm±0.5mm(Diagonal 247±0.5mm) Thickness: 130±13μm Front Side (+): Silicon oxide + blue silicon nitride compound anti-reflection coating (PID Free), half-cut design. The busbar head is a large double fork, and the pads of the busbar are intermittently stepped. The distance between the busbars is 10.8±0.15mm. The size of the head pad is 0.8±0.15mm×1.2±0.15mm, and the size of the middle pad is 0.8±0.15mm×0.6±0.15mm.
Back Side (-): The busbar width is 0.036±0.02mm, with 12 pads: the size of the head pad is 0.8±0.15mm×1.2±0.15mm; the size of the middle pad is 0.6±0.15mm×0.8±0.15mm.
Brief:Size: 182mm*182mm±0.5mm (Diagonal 247±0.5mm) Thickness: 155μm±10% Front Side (−): Silicon oxide + blue silicon nitride compound anti-reflection coating (PID Free) ; The front side is a half-cut design; The busbar head is a large double fork, and the pads of the busbar are intermittently stepped. The size of the head pad is 1.2 ± 0.15mm * 1.3± 0.15mm, and the middle pad of the busbar size is 0.7±0.15mm*0.9±0.15mm. Back Side (+): Passivated layer (AlOx and SiNx) and Rear Contact (Al); the rear electrode is composed of 10 roots busbar and 160 roots rear Al fingers. The width of composite busbar is 1.4 ± 0.3mm. 8 sections 2.1 ± 0.3mm * 5.0 ± 0.3mm silver anode.
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